http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101657343-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02049 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101657343-B1 |
| titleOfInvention | Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| abstract | The present invention provides a cleaning method, a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium capable of efficiently removing a deposit containing a carbon-containing film deposited in a treatment chamber. A cleaning method according to an embodiment of the present invention is a cleaning method for cleaning an inside of a treatment chamber after a treatment for forming a carbon-containing film on a substrate in the treatment chamber is performed, comprising the steps of supplying a reformed gas into the treatment chamber, A step of modifying the sediment containing the carbon-containing film, and a step of performing a cycle including a step of removing the sediment modified by supplying an etching gas into the treatment chamber by a thermochemical reaction. |
| priorityDate | 2013-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.