http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101654001-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2009-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101654001-B1 |
| titleOfInvention | Selective cobalt deposition on copper surfaces |
| abstract | Embodiments of the present invention provide a process for selectively forming a cobalt layer on a copper surface overlying an exposed dielectric. In one embodiment there is provided a method for capping a copper surface on a substrate comprising exposing a contaminated copper surface of a substrate in a processing chamber to a reducing agent while forming a metal copper surface during a pre- Exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer on or over the metal copper surface while leaving the dielectric surface intact during the vapor deposition process and forming a dielectric layer on or over the cobalt capping layer and dielectric surface And depositing a barrier layer. In another embodiment, the deposition processing cycle includes performing a vapor deposition process and subsequently performing a post-treatment process, wherein the deposition processing cycle can be repeated to form a plurality of cobalt capping layers. |
| priorityDate | 2008-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.