http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101652616-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-723 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2982 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-12 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-5935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-0687 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-626 |
| filingDate | 2013-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101652616-B1 |
| titleOfInvention | Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same |
| abstract | An object of the present invention is to provide a silicon nitride sintered body having high mechanical strength and thermal conductivity and a circuit board using the same. (-H) -based compound having an RS / RO of 500 or more is flowed through a continuous firing furnace while the specific surface area is RS (m 2 / g) and the oxygen content is RO (mass% And heating at a heating rate of 12 占 폚 / min to 100 占 폚 / min in a temperature range of 1400 占 폚. In addition, the content of oxygen existing 3 nm below the surface of the particle from the surface of the particle is referred to as FSO (mass%), and the content of oxygen existing inside 3 nm below the surface of the particle is referred to as FIO , A FS / FSO of 8 to 25 and a FS / FIO of 22 or more when the specific surface area is FS (m 2 / g), a silicon nitride sintered body obtained by sintering the silicon nitride powder, A circuit board using the sintered body is provided. |
| priorityDate | 2012-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.