http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101647897-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101647897-B1 |
| titleOfInvention | Method of forming source/drain contact |
| abstract | A method of manufacturing a semiconductor device is disclosed. The method includes a system for forming a gate structure on a substrate. The gate structure includes a first hard mask layer. The method also includes forming a source / drain (S / D) feature in the substrate adjacent the gate structure, forming a sidewall spacer along the sidewalls of the gate structure. The sidewall spacers have an outer edge at their upper portion in a direction away from the gate structure. The method also includes forming a second spacer along a sidewall of the gate structure and along an outer edge of the sidewall spacer, forming a dielectric layer over the gate structure, forming a sidewall spacer with the second spacer and the first hardmask layer Forming a trench extending through the dielectric layer to expose the source / drain features while the gate structure is protected by the trench. The method also includes forming a contact feature in the trench. |
| priorityDate | 2014-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.