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filingDate 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101640420-B1
titleOfInvention Germanium-based quantum well devices
abstract The quantum well transistor has a germanium quantum well channel region. The silicon containing etch stop layer provides for easy placement of the gate dielectric near the channel. The III-V barrier layer adds deformation to the channel. Graded silicon germanium layers above and below the channel region improve performance. Many gate dielectric materials enable the use of high-k gate dielectrics.
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