http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101639616-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101639616-B1 |
| titleOfInvention | Photo-electorde for tandem structure photoelectrochemical cell comprising metal ultra-thin layer and photoelectrochemical cell comprising the same |
| abstract | The present invention provides a semiconductor device comprising: a first semiconductor layer comprising silicon; A second semiconductor layer which is a metal oxide; And a metal ultra-thin layer disposed between the first semiconductor layer and the second semiconductor layer. The tandem-structured photoelectrochemical cell includes the photo-electrode. The photoelectrode for a tandem-structured photoelectric chemical cell according to the present invention can form an ohmic contact between a semiconductor layer, which is a metal oxide, and a semiconductor layer including silicon, by including a metal superficial layer between two semiconductor layers. have. Thus, the recombination efficiency of electrons and holes generated through light can be improved. Particularly, the gold (Au) superfine layer forming the nanoparticles aligned with a proper spacing has an increased exciton generation and surface plasmon resonance between the gold nanoparticles and near field plasmon coupling, There is an effect that the photocurrent density is remarkably improved due to the decrease in the resistance at the photoactive semiconductor layer and the interface due to the photoresist. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200050025-A |
| priorityDate | 2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.