http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101639576-B1

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-428
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64
filingDate 2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101639576-B1
titleOfInvention Manufacturing Method of Sintered Reaction Bonded Silicon Nitride With High Thermal Conductivity
abstract There is provided a method of manufacturing a reaction sintered silicon nitride sintered body having a high thermal conductivity suitable for use in a heat dissipation structure such as a power device. The present invention relates to a method of manufacturing a silicon carbide powder, comprising: milling a raw material powder containing Si powder to a size of 1 micron or less; Mixing and molding the milled Si powder and sintering aids; Nitriding the formed body at 1350 to 1450 ° C to form reaction bonded silicon nitride in the formed body; And sintering the reaction-bonded silicon nitride at a temperature of 1850 ° C or higher to produce a reaction sintered silicon nitride sintered body. According to the present invention, it becomes possible to provide a reaction sintered silicon nitride sintered body having a high thermal conductivity.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101972234-B1
priorityDate 2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 25.