http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101637024-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2013-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101637024-B1 |
| titleOfInvention | Method of preparing light emitting diode using the galvanic corrosion |
| abstract | The present invention relates to a method of manufacturing a light emitting diode (LED) using galvanic corrosion, and more particularly, to a method of manufacturing a light emitting diode (LED) by preparing a sapphire substrate having a galvanic metal layer on one surface thereof. Forming a nitride based buffer layer and a nitride based semiconductor layer on the other surface of the sapphire substrate; And a step of galvanically etching the nitride based buffer layer to remove the sapphire substrate. According to the present invention, it is possible to more easily remove the sapphire substrate in a short time by the wet etching method using galvanic corrosion in manufacturing the light emitting diode, and it is unnecessary to perform special processing such as laser for removing the sapphire substrate, There is an advantage that can be made. |
| priorityDate | 2013-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.