http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101633557-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2014-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101633557-B1 |
| titleOfInvention | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| abstract | According to the semiconductor manufacturing apparatus of one embodiment of the present invention, the reaction furnace has the gas introducing portion and the film forming reaction portion. The gas introduction portion includes a gas introduction port for introducing the process gas and a buffer portion for introducing the process gas from the gas introduction port. In the film forming reaction part, the film forming reaction is performed on the wafer by the process gas. The rectifying plate is provided at a lower portion of at least a part of the region surrounded by the buffer portion and supplies the process gas introduced in a state of being dispersed horizontally from the buffer portion to the upper surface of the wafer in a rectified state. The wafer supporting member is installed in the film forming reaction part and supports the wafer. The rotating portion is provided in the film forming reaction portion, supports the outer peripheral portion of the wafer supporting member, and rotates the wafer together with the wafer supporting member. The heater is installed in the rotary part and heats the wafer from the bottom side. The gas outlet is provided at the bottom of the reaction furnace and discharges the exhaust gas containing reaction by-products in the film-forming reaction. |
| priorityDate | 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.