http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101631456-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2009-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101631456-B1 |
| titleOfInvention | Soi substrate and method for manufacturing the same |
| abstract | An SOI substrate excellent in mechanical strength and a manufacturing method thereof are provided. An embrittlement region is formed in a predetermined depth region from the surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated hydrogen ions to bond the single crystal semiconductor substrate and the base substrate via the insulating layer, , And an embrittlement region as a boundary to form a semiconductor layer on the base substrate via an insulating layer and irradiate the surface of the semiconductor layer with laser light to melt at least a surface layer portion of the semiconductor layer, One of which is employed in the semiconductor layer.n n n n LTSS, laser, nitrogen, oxygen, concentration |
| priorityDate | 2008-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.