http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101626717-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b3e3de86fb3a7d008414342c8035051 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1443 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11585 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ca4574231c27956ad578dc1bd054e06 |
| publicationDate | 2016-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101626717-B1 |
| titleOfInvention | Memory device using PVDF film bonded with azobenzene and manufacturing method thereof |
| abstract | The present invention relates to a memory device using an azobenzene-bonded PVDF film and a method of manufacturing the same. A memory device according to an embodiment of the present invention includes a substrate, a lower electrode formed on the substrate and made of a conductive material, a ferroelectric layer provided on the lower electrode, and an upper electrode formed on the ferroelectric layer, And the ferroelectric layer may be a PVDF-azobenzene polymer film to which azobenzene and PVDF are bonded. |
| priorityDate | 2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.