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filingDate 2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101624484-B1
titleOfInvention Manufacturing method of transistor
abstract The off current of the thin film transistor is reduced, the ON current is improved, and the variation of the electrical characteristic is reduced. A method of fabricating a reverse-staggered, channel-etched thin film transistor, the method comprising the steps of: forming a semiconductor layer including an impurity element that imparts one conductivity type exposed at a source electrode and a drain electrode, A portion of the amorphous semiconductor layer exposed by the first dry etching is removed by a second dry etching and a portion of the amorphous semiconductor layer exposed by the second dry etching is removed by plasma Thereby forming a modified layer (modified layer).n n n n Plasma, microcrystalline, TFT, slight etching, device.
priorityDate 2008-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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