http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101623381-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101623381-B1 |
| titleOfInvention | Nitride semiconductor and method for manufacturing thereof |
| abstract | A nitride semiconductor device and a method of manufacturing the same are provided. A method for manufacturing a nitride semiconductor device includes growing a gallium nitride layer on a substrate, growing a first nitride layer having a predetermined doping concentration on the gallium nitride layer, etching the first nitride layer to form a source region, Forming a pinned channel layer connecting between the drain region and the source region and the drain region, increasing the doping concentration of the source region and the drain region, forming an insulating layer surrounding the channel layer, And a second electrode, and a third electrode surrounding the insulating layer is formed. |
| priorityDate | 2014-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.