http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101622672-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D46-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D39-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D46-00 |
| filingDate | 2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101622672-B1 |
| titleOfInvention | Treating device and method for nitric oxide originated anodizing process |
| abstract | The present invention relates to a first mist eliminator; A second mist eliminator; And an equalizing tank provided between the first mist eliminator and the second mist eliminator. According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a first mist removing step of separating gases of sulfur oxides and nitrogen oxides of 10 탆 or more and 40 탆 or less from the exhaust gas generated in the anodizing process; An equalizing step of keeping the exhaust gas passing through the first mist removing step; And a second mist removing step of separating gases of sulfur oxides and nitrogen oxides of 2 탆 or more and 10 탆 or less from the equalized exhaust gas. |
| priorityDate | 2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.