http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101607152-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15788 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 2009-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101607152-B1 |
| titleOfInvention | Semiconductor device and electronic device |
| abstract | One of the problems is to increase the resistance to overvoltage without increasing the area. The first n-type impurity region 106 is formed in the first terminal portion 100 and has a first n-type impurity region 106 and a first n-type impurity region 106 formed in the inner peripheral portion of the first n-type impurity region 106 in plan view A first semiconductor region 103 having a resistance region 107 and a first p-type impurity region 108 formed in an inner peripheral portion of the first resistance region 107 in plan view; A second resistive region 110 formed in an inner peripheral portion of the second p-type impurity region 109 in plan view, and a second resistive region 110 formed in the second resistive region 110 And a second semiconductor region 104 having a second n-type impurity region 111 formed in an inner peripheral portion of the second semiconductor region 104. n n Semiconductor devices, overvoltage protection circuits, diodes, photoelectric conversion circuits, optical sensors. |
| priorityDate | 2008-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.