http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101605424-B1

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filingDate 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101605424-B1
titleOfInvention Image sensors employing sensitized semiconductor diodes
abstract In various exemplary embodiments, the claimed subject matter is a method of forming an image sensor and an image sensor. In one embodiment, the image sensor comprises a semiconductor substrate and a plurality of light emitting regions. Each pixel region comprises a photosensitive material on a substrate and the photosensitive material is positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit includes a semiconductor substrate and a charge storage portion formed in the readout circuit. A non-metallic contact region is located between the photosensitive material and the charge storage portion of each pixel region, and the charge storage portion is in electrical communication with the photosensitive material of each pixel region through the non-metal contact region.
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priorityDate 2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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