| abstract |
(ALD) process for forming thin films of tellurium, for example, Sb-Te, Ge-Te, Ge-Sb-Te, Bi-Te and Zn-Te. The present invention also provides an atomic layer deposition process for forming selenium-containing thin films, for example, Sb-Se, Ge-Se, Ge-Sb-Se, Bi-Se and Zn-Se thin films. It is preferred to use tellurium and selenium precursors of the formula (Te, Se) (SiR 1 R 2 R 3 ) 2 wherein R 1 , R 2 and R 3 are alkyl groups. Methods for the synthesis of these tellurium and selenium precursors are also provided. A method of using the tellurium and selenium thin films in a phase change memory device is also provided. |