| abstract |
An embodiment of a semiconductor device with increased channel mobility and a method of manufacturing the same is disclosed. In one embodiment, the semiconductor device comprises a substrate comprising a channel region, and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is barium (Ba). In another embodiment, the alkaline earth metal is strontium (Sr). Alkaline earth metals cause significant improvement in channel mobility of semiconductor devices. |