| abstract |
Embodiments of the present invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing conductive materials such as copper or copper alloy thereon. In one embodiment, a method is provided for depositing materials on a substrate surface, the method comprising forming a barrier layer on the substrate, depositing a barrier layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD) Exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer, and depositing a conductive material over the cobalt layer. In some embodiments, the barrier layer and / or the cobalt layer may be exposed to a gas or a reagent during a process such as a thermal process, an in situ plasma process, or a remote plasma process. |