http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101594465-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate | 2009-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101594465-B1 |
| titleOfInvention | Etching composition for thin film transistor liquid crystal display device |
| abstract | The present invention relates to patterning of a copper film which is a wiring material of a gate electrode and a source / drain (source / drain) constituting a thin film transistor liquid crystal display (TFT-LCD) ≪ / RTI >n n n The present invention relates to a process for the preparation of a composition comprising 5 to 25% by weight of a peroxide selected from sodium persulfate, potassium persulfate or a mixture thereof, 0.5 to 5% by weight of an oxidizing agent, 0.1 to 1% by weight of a fluorine compound, 0.1 to 5% A copper alloy film, a titanium film, a titanium alloy film, a molybdenum film, a molybdenum alloy film, or a multilayer film in which these films are laminated so as to be in a weight percentage.n n n The etchant may provide an etch rate, an appropriate etch rate, and an appropriate taper angle for the process. In addition, since the viscosity is lower than that of the phosphoric acid etching solution, it exhibits uniform etching characteristics and is more stable than the hydrous etching solution.n n n n Copper, thin film transistor liquid crystal display, etch composition |
| priorityDate | 2009-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.