http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101591386-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101591386-B1
titleOfInvention Method for fabricating a TFT
abstract In the self-alignment process, an excessive temperature rise of the film constituting the thin film transistor is prevented at the time of excimer laser light irradiation. A diffusion preventing film 4 is formed on the substrate 2 through which the excimer laser light 16 is transmitted and a gate electrode 6 and a gate insulating film 8 are formed thereon and an oxide semiconductor layer 10 is formed thereon The excimer laser light 16 is irradiated from the substrate 2 side to the forming structure 14a to be formed and the gate electrode 6 is used as a mask to expose the gate electrode 6 in the oxide semiconductor layer 10 corresponding to the gate electrode 6 The region outside both sides of the region is irradiated with the excimer laser beam 16 to reduce the resistance. One of the two regions is used as the source region 18, and the other region is used as the drain region 19. [ The diffusion preventive film 4 is composed of a fluorinated silicon nitride film (SiN: F) containing fluorine in the silicon nitride film.
priorityDate 2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.