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filingDate 2008-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101588626-B1
titleOfInvention Methods, structures and designs for self-aligning local interconnects used in integrated circuits
abstract Methods, structures, and designs are provided for self-aligned local interconnects. The method includes designing diffusion regions to be within the substrate. Some of the plurality of gates are designed to be active gates, and some of the plurality of gates are designed to be formed over the isolation regions. The method includes designing a plurality of gates in a regular and repeating alignment along the same direction, wherein each of the plurality of gates is designed to have dielectric spacers. The method also includes designing a local interconnect layer between the plurality of gates or adjacent the plurality of gates. The local interconnect layer is conductive and disposed on the substrate to permit electrical contact and interconnection to a portion of the active regions of the active gates or to portions of the active regions of the active regions. The local interconnect layer is self-aligned by the dielectric spacers of the plurality of gates.
priorityDate 2007-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 37.