http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101585696-B1

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24
filingDate 2007-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101585696-B1
titleOfInvention A reflective mask blank for EUV lithography, and a substrate on which the functional film for the mask blank is formed
abstract Provided is a substrate on which a conductive film for an EUV mask blank is formed in which generation of particles due to friction between an electrostatic chuck and a substrate is prevented, a substrate on which a multilayer reflective film is formed using the substrate on which the conductive film is formed, and an EUV mask blank. Wherein the conductive film contains chromium (Cr) and nitrogen (N), and the average concentration of N in the conductive film is 0.1 at% or more and 40 at% %, And the surface state of the conductive film is amorphous, the sheet resistance value of the conductive film is 27? /? Or less, and the surface roughness (rms) of the conductive film is 0.5 nm or less. .n n n n Conductive film, average concentration, amorphous, sheet resistance value, surface roughness, average concentration
priorityDate 2006-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 29.