| abstract |
The power amplifier module comprises: a collector, GaAs pair having a base, emitter and collector close to the power amplifier including the transistor polarity - the collector has a dopant concentration of at least about 3x10 16 cm -3 at the junction with the base, the collector is also And at least a first gradation in which the doping concentration increases as the distance from the base increases; And an RF transmission line driven by a power amplifier, wherein the RF transmission line comprises a finish plating on the conductive layer and the conductive layer, wherein the finish plating comprises a gold layer, a palladium layer close to the gold layer, and a diffusion barrier layer close to the palladium layer And the diffusion barrier layer comprises nickel and has a thickness less than the skin depth of approximately nickel at 0.9 GHz. Other embodiments of the module are provided with its associated methods and components. |