http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101578439-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-668 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-442 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-565 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64 |
| filingDate | 2014-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101578439-B1 |
| titleOfInvention | Pressureless sintered silicon carbide ceramics with high thermal conductivity, compositions thereof and Process for producing the Same |
| abstract | The present invention relates to a composition for the production of a high temperature conductive pressureless sintered silicon carbide material, a silicon carbide material and a method for producing the material, and more particularly to a silicon carbide material containing Al 2 O 3 and Y 2 O 3 as sintering additives, In addition, at least two kinds of materials selected from the group consisting of CaO, MgO, SrO, BaO, a material that generates CaO by heat treatment, a material that generates MgO by heat treatment, a material that produces SrO by heat treatment, And a sintering additive is added to the sintering additive. The sintering temperature of the sintering temperature is as low as 1650 to 1750 DEG C and the sintering temperature is higher than the sintering temperature of the silicon carbide material. To provide a method of manufacturing a silicon carbide material having a simple process. According to the present invention as described above, the present invention provides a sintering additive comprising Al 2 O 3 and Y 2 O 3, and further comprising CaO, MgO, SrO, BaO, a material that produces CaO by heat treatment, By using a sintering additive selected from the group consisting of a material that produces SrO by heat treatment and a material that produces BaO by heat treatment is used instead of the expensive nano-sized silicon carbide particles, a submicron sized Since the sintering additive reacts with SiO 2 on the surface of silicon carbide to form a multicomponent eutectic liquid phase of a pentagonal phase or higher in spite of using only beta phase or alpha phase silicon carbide powder, Densification can be expected. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101817207-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11527333-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004570-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018233239-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11715571-B2 |
| priorityDate | 2014-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.