http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101574514-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2330-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3648 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3241 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 2014-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101574514-B1 |
| titleOfInvention | Semiconductor device, display device, and electronic appliance |
| abstract | When the size of the semiconductor is large, the power consumption of the transistor is increased. Therefore, the present invention provides a display device capable of preventing a current from flowing to the display element during a signal writing operation without changing the potentials of the power source lines for supplying current to the display element for each row. In setting the gate-source voltage of the transistor by applying a predetermined current to the transistor, the potential of the gate terminal of the transistor is adjusted so as to prevent the current from flowing to the load connected to the source terminal of the transistor. Therefore, the potential of the wiring connected to the gate terminal of the transistor is differentiated from the potential of the wiring connected to the drain terminal of the transistor. |
| priorityDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.