| abstract |
It is an object of the present invention to provide a photoelectric conversion device in which a crystalline semiconductor layer of a good quality to be directly formed is formed on a large area substrate with good productivity without reducing the deposition rate and the crystalline semiconductor layer is used as the photoelectric conversion layer do. Introducing a reactive gas into a processing chamber in which a substrate is placed and introducing a microwave into the processing chamber through a slit formed in a waveguide disposed substantially parallel to the substrate to generate a plasma, Thereby forming a photoelectric conversion layer made of a semiconductor. Thereby, a high-quality semi-amorphous semiconductor can be obtained without lowering the deposition rate. By forming the photoelectric conversion layer with such a semiamorphous semiconductor, the characteristic deterioration due to photo deterioration becomes 1/5 to 1/10, and a photoelectric conversion device having practically no problem can be obtained.n n n n Semi-amorphous semiconductor, photoelectric conversion layer, reactive gas, plasma, microwave |