| abstract |
[PROBLEMS] In a process for manufacturing a semiconductor device, damage to wiring materials such as a low dielectric constant interlayer insulating film, copper or copper alloy, a barrier metal and a barrier insulating film is suppressed and an organosiloxane thin film, And to provide a cleaning liquid composition for removing a photoresist, a cleaning method of a semiconductor element using the same, and a manufacturing method of a semiconductor device using the same. [MEANS FOR SOLVING PROBLEMS] The liquid composition for cleaning used in the production of a semiconductor device of the present invention comprises 0.05 to 25% by mass of quaternary ammonium hydroxide, 0.001 to 1.0% by mass of potassium hydroxide, 5 to 85% A solvent, and 0.0005 to 10 mass% pyrazoles. |