http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101561855-B1

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
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filingDate 2008-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101561855-B1
titleOfInvention Manufacturing method of SOI substrate
abstract It is an object of the present invention to provide a method of manufacturing an SOI substrate including a semiconductor layer that can withstand practical use even when a substrate having a low heat resistance temperature such as a glass substrate is used. n A semiconductor substrate having a bonding layer formed on its surface and having a release layer formed at a predetermined depth and a base substrate having a deformation point of 700 DEG C or less are prepared and the semiconductor substrate and the base substrate are opposed to each other to bond the bonding layer and the base substrate, And a step of separating a part of the semiconductor substrate with the peeling layer as a boundary to form a single crystal semiconductor layer on the base substrate. A substrate which is isotropically contracted at least by heat treatment is used as the base substrate. n n SOI substrate, single crystal semiconductor layer, isotropic shrinkage, heat treatment, thermal expansion coefficient
priorityDate 2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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