http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101556574-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101556574-B1 |
| titleOfInvention | Double patterning etching process |
| abstract | A method of etching a substrate includes forming a plurality of dual patterning features on a substrate, the substrate being made of silicon oxide, silicon nitride, or silicon oxynitride. A substrate having dual patterning features is provided in the process area. The etching gas comprising nitrogen trifluoride, ammonia, and hydrogen is energized in the remote chamber. To etch the dual patterning features to form a solid residue on the substrate, an energized etch gas is introduced into the process region. By heating the substrate to a temperature of at least about 100 캜, the solid residue sublimes. |
| priorityDate | 2011-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 83.