| abstract |
The present invention relates to a photodetecting device and a manufacturing method thereof, and more particularly, to a photodetecting device and a method of manufacturing the same. The photodetecting device includes a substrate having a gate electrode, a substrate on which a dielectric layer is formed, a source electrode and a drain electrode spaced apart from each other above the dielectric layer, , Dye molecules coated on the channel layer. At this time, the channel layer is composed of atomic materials that are nuclear accident. |