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filingDate 2011-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101547051-B1
titleOfInvention High-purity erbium, sputtering target comprising high-purity erbium, metal gate film having high-purity erbium as main component thereof, and production method for high-purity erbium
abstract A rare earth element and a gaseous component, wherein the purity is not less than 5N, and each of Al, Fe, Cu and Ta is not more than 1 wtppm, W is not more than 10 wtppm, carbon is not more than 150 wtppm, alkali metals and alkaline earth metals are each not more than 1 wtppm, And the radioactive elements U and Th are each 10 wt ppb or less. A method for highly purifying erbium which has a high vapor pressure and is difficult to purify in a molten state, and a method for efficiently and stably providing a high-purity erbium, a sputtering target made of erbium of high purity and a metal gate thin film containing erbium as a main component And to provide a technology that can be used.
priorityDate 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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