http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101540127-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101540127-B1 |
| titleOfInvention | Thin film transistor, method of manufacturing polycrystalline oxide semiconductor thin film, and method of manufacturing thin film transistor |
| abstract | A thin film transistor comprising a thin film made of an oxide semiconductor containing at least one element selected from the group consisting of In and a group consisting of Ga and Zn can be used for a thin film transistor having a high TFT characteristic, a method for producing a polycrystalline oxide semiconductor thin film, . (Solution) In a first step, a vapor-phase film formation method using a polycrystalline sintered body having an IGZO-based composition as a target is formed on a substrate 12 so that at least one element selected from the group consisting of In and Ga and Zn A thin film 10A made of an amorphous oxide semiconductor is formed. In the second step, the thin film 10A made of an amorphous oxide semiconductor is charged into an electric furnace and baked at a temperature range of 660 DEG C to 840 DEG C in which polycrystallization is carried out while keeping the surface roughness Ra value at 1.5 nm or less. |
| priorityDate | 2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.