http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101538911-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-961 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-938 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3435 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3482 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101538911-B1 |
| titleOfInvention | Semiconductor substrate, display panel, and manufacturing method of display device |
| abstract | Even if a large glass substrate is used, there is a problem that the number of panels to be obtained can not be maximized and the cost can not be minimized unless the size of the single crystal silicon layer bonded in a tile shape is appropriate.n n n A substantially quadrangular single crystal semiconductor substrate is formed from a substantially circular single crystal semiconductor wafer having a diameter of 300 mm to 450 mm and an ion beam containing cluster ions is injected from one surface of the single crystal semiconductor substrate to form a damaged layer. A plurality of the single crystal semiconductor substrates are arranged on one surface of the support substrate. The single crystal semiconductor substrate is peeled and removed with the single crystal semiconductor layer remaining on the supporting substrate so as to cause cracks in the damaged layer. The single crystal semiconductor layer is irradiated with a laser beam in a nitrogen atmosphere to planarize the surface of the single crystal semiconductor layer and one or a plurality of display panels are fabricated from the single crystal semiconductor layer adhered to the support substrate.n n n n Semiconductor substrate, display panel, display device, single crystal semiconductor layer |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102505181-B1 |
| priorityDate | 2007-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.