http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101538581-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2014-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101538581-B1 |
| titleOfInvention | Semiconductor device manufacturing method, substrate processing apparatus and recording medium |
| abstract | An object of the present invention is to form a thin film having excellent ashing resistance while maintaining high etching resistance. A method of manufacturing a semiconductor device according to the present invention includes the steps of supplying a source gas having Si-C bonds including silicon, carbon and halogen elements to a substrate and a catalyst gas; And a step of supplying a reformed gas containing a predetermined element selected from the group consisting of a group III element and a group V element to the substrate a predetermined number of times so as to contain silicon, And forming a thin film on the substrate. |
| priorityDate | 2013-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 162.