| abstract |
A semiconductor device, comprising at least a gate electrode, a gate insulating film, a semiconductor layer, a protective layer of a semiconductor layer, a source electrode, and a drain electrode, the source electrode and the drain electrode being connected via a semiconductor layer, A semiconductor device according to any one of claims 1 to 3, wherein a gate insulating film is provided between the semiconductor layers, a protective layer is provided on at least one side of the semiconductor layer, and the semiconductor layer is an oxide containing In atoms, Sn atoms and Zn atoms, Wherein the atomic composition ratio is 25 atomic% or more and 75 atomic% or less, and the atomic composition ratio represented by Sn / (In + Sn + Zn) is less than 50 atomic%. |