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filingDate 2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101538262-B1
titleOfInvention Semiconductor constructions having through-substrate interconnects, and methods of forming through-substrate interconnects
abstract Some embodiments include methods of forming interconnects through semiconductor substrates. The opening may be formed to extend to the middle through the semiconductor substrate, and a portion of the interconnect may be formed in the opening. Other openings may be formed to extend from the second side of the substrate to the first portion of the interconnect, and other portions of the interconnect may be formed in such openings. Some embodiments include a first portion of a penetrating substrate interconnect that extends partially from a first side of a substrate through a semiconductor substrate; And semiconductor structures having a second portion extending from a second side of the substrate and having a plurality of discrete conductive fingers extending all the way to the first portion of the interconnect.
priorityDate 2011-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 59.