http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101535702-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate | 2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101535702-B1 |
| titleOfInvention | Resist underlayer film composition and patterning process using the same |
| abstract | The present invention particularly relates to a three-layer resist process lower layer film capable of reducing the reflectance (having the optimum n value and k value as the antireflection film), excellent in the filling property, high pattern bending resistance, A resist underlayer film material capable of forming a lower layer film free from collapse or twisting of lines after etching in an orphan spectral line, and a pattern forming method using the same. The solving means of the present invention is a solution of at least one compound represented by at least the following general formulas (1-1) and / or (1-2), at least one compound represented by the following general formula (2) 3), and / or an equivalent thereof, in the presence of a solvent. |
| priorityDate | 2011-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 288.