http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101530230-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2008-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101530230-B1 |
| titleOfInvention | Method of manufacturing SOI substrate and method of manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a method of manufacturing an SOI substrate including a single crystal semiconductor layer that can withstand practical use even when a substrate having a low heat resistance temperature such as a glass substrate is used. Another object of the present invention is to manufacture a highly reliable semiconductor device using the above-described SOI substrate. n A semiconductor layer separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves and the surface of the semiconductor layer irradiated with electromagnetic waves is subjected to a polishing process. By irradiating electromagnetic waves, at least a part of the region of the semiconductor layer is dissolved, and crystal defects in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished by polishing to be planarized. Therefore, by the irradiation of electromagnetic waves and the polishing treatment, an SOI substrate having a semiconductor layer with reduced crystal defects and high flatness can be manufactured. n n SOI, brittle layer, irradiation, polishing, defect |
| priorityDate | 2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 215.