| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04953
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2013-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101524920-B1 |
| titleOfInvention |
Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the same |
| abstract |
A connection structure for bonding semiconductor devices and a method of forming the same are provided. The bonding structure includes an alpad structure (i.e., a thick aluminum-containing connection pad), and a sub-structure under the aluminum-containing connection pad including at least a pre-metal layer and a barrier layer. The metal overlay is a high density material layer and includes a density greater than the barrier layer and is a low surface roughness film. The high-density pre-metal layer prevents plasma damage from damaging underlying dielectric devices or from damaging underlying semiconductor devices. |
| priorityDate |
2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |