| abstract |
The semiconductor device includes a semiconductor chip bonded to the substrate 122 and a base plate bonded to the substrate 122. [ The base plate includes a first metal layer 108 clad to a second metal layer 106. The second metal layer 106 is modified to provide a fin-finned or finned cooling structure 112. The second metal layer 106 has a sub-layer 113 that has no fins and no fin-fin. The first metal layer 108 has a first thickness d108 and the sublayer 113 has a second thickness d113. The ratio between the first thickness d108 and the second thickness d113 is at least 4: 1. |