| abstract |
The member 10 for a semiconductor manufacturing apparatus includes an electrostatic chuck 20 made of alumina, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33 and a first metal bonding layer 34 formed between the first and second substrates 31 and 32, A second metal bonding layer 35 formed between the substrates 32 and 33, and a coolant passage 36. The first to third substrates 31 to 33 are formed of a dense composite material containing silicon carbide in the largest amount and containing titanium silicide, titanium silicon carbide, and titanium carbide. The metal bonding layers 34 and 35 are formed of an Al-Si-Mg-based or Al-Mg-based alloy between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33 And the respective substrates 31 to 33 are thermocompression-bonded in a state of sandwiching the metal bonding material. |