http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101498576-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2008-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101498576-B1 |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | The present invention provides a method of fabricating a semiconductor device capable of preventing impurities from being mixed in an SOI substrate. A source gas containing at least one kind of gas selected from a hydrogen gas, a helium gas and a halogen gas is excited to generate ions, and the ions are added to the bond substrate to embrittle the bond substrate, Layer. Then, a region in the vicinity of the surface of the bond substrate, that is, a region from a position shallower than the brittle layer in the bond substrate to the surface is removed by etching or polishing. Next, after bonding the bond substrate and the base substrate, the semiconductor substrate is formed on the base substrate by separating the bond substrate from the embrittled layer. After the semiconductor film is formed on the base substrate, a semiconductor element is formed using the semiconductor film.n n n n LISS, ion doping, impurities, etching, H3 + |
| priorityDate | 2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 117.