http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101497353-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-977 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2015-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2015-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101497353-B1 |
titleOfInvention | Manufacturing method of SOI substrate |
abstract | It is an object of the present invention to reduce the occurrence of poor bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object of the present invention is to provide an SOI substrate manufacturing method capable of suppressing an increase in process.n n n A semiconductor substrate and a base substrate are prepared, an oxide film is formed on the semiconductor substrate, and accelerated ions are irradiated to the semiconductor substrate through an oxide film to form a release layer at a predetermined depth from the surface of the semiconductor substrate, Thereafter, a nitrogen-containing layer is formed on the oxide film, the semiconductor substrate and the base substrate are opposed to each other, the surface of the nitrogen-containing layer is bonded to the surface of the base substrate, And a nitrogen-containing layer are formed to form a single-crystal semiconductor layer.n n n n A semiconductor substrate, a base substrate, an oxide film, a peeling layer, a single crystal semiconductor layer |
priorityDate | 2007-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.