http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101496738-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345 |
| filingDate | 2008-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101496738-B1 |
| titleOfInvention | Method for manufacturing semiconductor device, semiconductor device and electronic device |
| abstract | After forming the non-single crystal semiconductor layer on the substrate, a single crystal semiconductor layer is formed on a partial region of the non-single crystal semiconductor layer. This makes it possible to form a semiconductor element in a region where a large area is required (for example, a pixel region in a display device) by using a non-single crystal semiconductor layer, and to use a single crystal semiconductor layer in a region For example, a drive circuit region in the display device) can be formed. n n Single crystal semiconductor substrate, non-single crystal semiconductor layer, junction, ion irradiation, glass substrate |
| priorityDate | 2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 94.