| abstract |
The present invention relates to a gap fill method for a semiconductor device that can perform an atomic layer deposition process and a high-density plasma chemical vapor deposition process in a plasma processing apparatus so as to capture an ultra-fine line width element.n n n A method of gapping a semiconductor device according to the present invention includes: providing a semiconductor substrate having a plurality of gaps formed by a plurality of patterns; Depositing an insulating film on the semiconductor substrate by performing an atomic layer deposition process; Performing a high-density plasma treatment in a reducing gas atmosphere to form an insulating film shape having a thickness smaller than a thickness of the insulating film deposited on the lower portion of the gap; The insulating film deposition step and the insulating film shape forming step are repeated at least once to capture the plurality of gaps.n n n n Gapfil, Boyd, HDPCVD, ALD |