| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
| filingDate |
2013-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101490174-B1 |
| titleOfInvention |
Light Emitting Diode of having Multi-Junction Structure and Method of forming the same |
| abstract |
A light emitting diode having a multi-junction structure and a method of forming the same are disclosed. Each of the light emitting structures has a rod shape or the like, and two light emitting layers are formed around the p-type semiconductor layer. In addition, a p-type electrode is formed on the side surface of the p-type semiconductor layer, and formation of the p-type electrode is performed by forming and removing a sacrifice layer. Thus, a p-type electrode can be formed as a side electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101725193-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017030406-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170021982-A |
| priorityDate |
2013-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |