http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101482944-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02617
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2008-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101482944-B1
titleOfInvention A method of manufacturing a thin film transistor having titanium oxide as an active layer and a thin film transistor
abstract The present invention relates to a method for fabricating a thin film transistor having titanium oxide as an active layer and a thin film transistor fabricated thereby, and a method for fabricating the thin film transistor according to the present invention includes: preparing a substrate; Forming an active layer on the substrate; And forming an insulating film on the active layer, wherein an organic compound containing titanium (Ti) is used as a precursor by chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD) (ALD), a low pressure chemical vapor deposition (LPCVD), and a plasma enhanced vapor deposition (PECVD) method, do. Accordingly, the present invention not only improves the performance of the thin film transistor, but also can be manufactured at low cost, has few environmental problems, and can be widely applied to certain types of electronic devices. In particular, a thin film transistor can be formed even at a low temperature, and thus the width of the substrate can be selected in the future.n n n n Thin film transistor, active layer, titanium oxide, MISFET, gate electrode, source electrode, drain electrode.
priorityDate 2008-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 34.