http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101481593-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2011-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101481593-B1 |
| titleOfInvention | Non-polar nitride-based light emitting device and method for the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to a non-polarization nitride light emitting device and a manufacturing method thereof. The present invention relates to an r-plane sapphire substrate; A nitride semiconductor layer located on the substrate and including an a-plane nitride-based semiconductor, the nitride semiconductor layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A light extracting layer disposed on the second conductive semiconductor layer and including at least one layer of indium containing a plurality of unit structures having an inverted pyramidal indentation; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive semiconductor layer. |
| priorityDate | 2011-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.