http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101480529-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2008-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101480529-B1 |
| titleOfInvention | In situ deposition of silicon and titanium nitride |
| abstract | There is provided a method of processing a semiconductor wafer, the method comprising: loading a batch of semiconductor wafers into a process chamber; Depositing titanium nitride (TiN) on the wafers in the process chamber; And depositing silicon on the wafers in the process chamber, wherein the wafers are not removed from the process chamber between the depositing steps. In preferred embodiments, the steps of depositing the titanium nitride and depositing the silicon are performed at temperatures within the range of about 400 ° C to 550 ° C and temperatures within 100 ° C of each other.n n n n TiN deposition, batch type reactor |
| priorityDate | 2007-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.